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Electronics Integration and Reliability (EILB) (Electronics Integration and Reliability | Aalto University) is a research group at Aalto University's School of Electrical Engineering dedicated to advancing electronics through innovative materials and device design concepts. Our current research focuses on developing AlN and high–Al-content AlGaN power devices using distributed polarization doping approaches for next-generation power electronics. Our mission is to enable high-power devices with substantially higher breakdown voltages and operating temperatures than conventional counterparts.

We are currently seeking a Research Fellow or Postdoctoral Researcher with specialized expertise in the epitaxial growth and characterization of III-nitrides, particularly AlN, AlGaN, and GaN. High-quality epitaxial growth of the layers will be conducted on a variety of substrates, including silicon, silicon carbide (SiC), and aluminum nitride (AlN), utilizing Aalto University's state-of-the-art AIXTRON MOVPE reactor. Following growth, the materials will undergo comprehensive material characterization to assess layer quality through techniques such as high-resolution X-ray diffraction (HRXRD), X-ray photoelectron spectroscopy (XPS), ellipsometry, atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS). Electrical properties will be evaluated using Hall effect measurements, capacitance-voltage (CV) profiling, current-voltage (IV) analysis, and deep-level transient spectroscopy (DLTS). All the facilities are located at OtaNano, a national research infrastructure in Finland, jointly managed by Aalto University and VTT (OtaNano | Aalto University). OtaNano offers an extensive array of micro- and nanofabrication resources within clean-room environments, along with high-resolution imaging and state-of-the-art characterization tools, including ultra-low temperature possibilities for device fabrication and characterization.

This role involves contributing to various ongoing projects within our group funded by EU Chips JU, Business Finland (BF) co-innovation, and Technology Programme Helsinki Institute of Physics such as Moore4Power, WIBASE, and AQUES respectively. The role involves working and contributing towards several topics such as AlN polarization-doped field effect transistors (PolFETs), thermally conductive Silicon on Insulator (SOI), AlN on silicon for single photon emitters, and vertically-grown AlN for 3D micro-electromechanical systems (MEMS) applications.

Requirements

• Doctoral degree in a suitable area (e.g. electrical engineering, physics, or materials science)

• A strong track record of research in III-V or III-Nitride semiconductors and excellent understanding of semiconductor device physics

• Hands-on experience and solid understanding of epitaxial processes, such as MOVPE or MBE

• Experience in TCAD modelling using Synopsys or Silvaco tools is a plus

• Hands-on experience and solid understanding of relevant characterization methods, such as HRXRD, SEM, TEM, AFM, Photoluminiscence (PL)

• Experience in micro- and nanofabrication

• Experience on probe-station based measurements for electrical characterization (IV, CV)

• Experience in writing grant proposals and securing research funding is an advantage

We offer

• Fixed-term position for 3-years (1+2)*

• The expected starting salary for a postdoctoral researcher is approximately 4100 €/month.*

• Opportunity to conduct independent research in OtaNano (OtaNano | Aalto University) using cutting-edge infrastructure in Micronova and Nanomicroscopy Center

• Possibility to participate in already funded public-private-partnership projects and network with major European industrial and academic project partners

• Opportunity to conduct independent academic research and contribute to new research funding applications

• Possibility to co-advice graduate students and participate in teaching

• Occupational health and social security benefits

* Instead of postdoctoral researcher, an applicant can be hired as a research fellow if they are a qualified researcher with significant postdoctoral research experience and are developing their academic competence further to advance their academic career.  In these cases, the length of the position and salary level will be determined at the time of hiring. 

The appointment is available immediately.

If you got interested

Please submit your application through the “Apply now” link at the bottom of the web page and include the following documents in English as PDF files: 

• Letter of motivation (max one page)

• CV including list of publications

• Copy of your degree certificates and a transcript of studies

• Contact details of two referees (and letters of recommendation, if already available)

The application deadline is 28.02.2026.

Please note: Aalto University’s employees should apply for the position via our internal HR system Workday (Internal Jobs) by using their existing Workday user account (not via the external webpage for open positions). If you are a student or visitor at Aalto University, please apply with your personal email address (not aalto.fi) via Aalto University open positions

More information

Regarding the application process and practical arrangements, please contact HR Advisor Johanna Haapalainen (hr-elec@aalto.fi).

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